The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jun. 21, 2012
Suzette K. Pangrle, Cupertino, CA (US);
Steven Avanzino, Cupertino, CA (US);
Sameer Haddad, San Jose, CA (US);
Michael Vanbuskirk, Saratoga, CA (US);
Manuj Rathor, Milpitas, CA (US);
James Xie, San Jose, CA (US);
Kevin Song, Santa Clara, CA (US);
Christie Marrian, San Jose, CA (US);
Bryan Choo, Mountain View, CA (US);
Fei Wang, San Jose, CA (US);
Jeffery A. Shields, Sunnyvale, CA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Steven Avanzino, Cupertino, CA (US);
Sameer Haddad, San Jose, CA (US);
Michael Vanbuskirk, Saratoga, CA (US);
Manuj Rathor, Milpitas, CA (US);
James Xie, San Jose, CA (US);
Kevin Song, Santa Clara, CA (US);
Christie Marrian, San Jose, CA (US);
Bryan Choo, Mountain View, CA (US);
Fei Wang, San Jose, CA (US);
Jeffery A. Shields, Sunnyvale, CA (US);
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Abstract
A present method of fabricating a memory device includes the steps of providing a dielectric layer, providing an opening in the dielectric layer, providing a first conductive body in the opening, providing a switching body in the opening, the first conductive body and switching body filling the opening, and providing a second conductive body over the switching body. In an alternate embodiment, a second dielectric layer is provided over the first-mentioned dielectric layer, and the switching body is provided in an opening in the second dielectric layer.