The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2006
Filed:
Feb. 02, 2004
Jean Y. Yang, Sunnyvale, CA (US);
Jeff P. Erhardt, San Jose, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Jeff P. Erhardt, San Jose, CA (US);
Cyrus Tabery, Sunnyvale, CA (US);
Weidong Qian, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
The invention is a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes buried bitlines in a semiconductor substrate. Additionally, doped regions are formed adjacent the buried bitlines. The doped regions adjacent the buried bitlines inhibit a leakage current between the buried bitlines.