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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Jaeyong Park

This inventor holds 23 USPTO granted patents, primarily in Flash Memory Technology. Top assignees: Spansion LLC., Fasl LLC, Advanced Micro Devices Corporation. Active years: 2004-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jaeyong Park. Retrieved from https://idiyas.com/inventor/jaeyong-park-ws5jsnmm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23

% Patents Active = 78.3

Average Co-Inventor Count = 5.1

ph-index = 12

Forward Citations = 511(Granted Patents)


Company Filing History:

goldMedal9 out of 1,075 
 
Spansion LLC.
 patents
silverMedal7 out of 30 
 
Fasl LLC
 patents
bronzeMedal6 out of 13,175 
 
Advanced Micro Devices Corporation
 patents
4. 1 out of 834,570 
Other
 patents

Years Active: 2004-2010

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Areas of Expertise:
Flash Memory
SONOS Memory
Gate Formation
ONO Fabrication
UV Radiation
Memory Cell Scaling
Dielectric Materials
Bitline Hard Mask
Charging Prevention
Nitrogen Concentration
Oxygen Content
Hot Carrier Injection
23 patents (USPTO):Explore Patents
1. 7692236 - Multiple dual bit memory integrated circuit system (2010-04-06),
2. 7501677 - SONOS memory with inversion bit-lines (2009-03-10),
3. 7394125 - Recessed channel with separated ONO memory device (2008-07-01),
4. 7320914 - System and method for gate formation in a semiconductor device (2008-01-22),
5. 7220643 - System and method for gate formation in a semiconductor device (2007-05-22),
6. 7196008 - Aluminum oxide as liner or cover layer to spacers in memory device (2007-03-27),
7. 7151293 - SONOS memory with inversion bit-lines (2006-12-19),
8. 7067377 - Recessed channel with separated ONO memory device (2006-06-27),
9. 7052961 - Method for forming wordlines having irregular spacing in a memory array (2006-05-30),
10. 7033957 - ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices (2006-04-25),
11. 7018896 - UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing (2006-03-28),
12. 7018868 - Disposable hard mask for memory bitline scaling (2006-03-28),
13. 6969886 - ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices (2005-11-29),
14. 6958511 - Flash memory device and method of fabrication thereof including a bottom oxide layer with two regions with different concentrations of nitrogen (2005-10-25),
15. 6949433 - Method of formation of semiconductor resistant to hot carrier injection stress (2005-09-27),

Title: Jaeyong Park: Pioneering Inventor from Sunnyvale

Introduction: Jaeyong Park is a renowned inventor based in Sunnyvale, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jaeyong Park holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a career spanning over two decades, Jaeyong Park has worked with leading tech companies in Silicon Valley, where he has spearheaded numerous projects that have revolutionized the industry.

Collaborations: Throughout his career, Jaeyong Park has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and excellence in all his endeavors.

Conclusion: Jaeyong Park's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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