The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Mar. 30, 2004
Jaeyong Park, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
FASL LLC, Sunnyvale, CA (US);
Abstract
Systems and methods of fabricating a U-shaped memory device with a recessed channel and a segmented/separated ONO layer are provided. Multibit operation is facilitated by a separated ONO layer, which includes a charge trapping region on sidewalls of polysilicon gate structures adjacent to source/drain regions. Programming and erasing of the memory cells is facilitated by the relatively short distance between acting source regions and the gate. Additionally, short channel effects are mitigated by a relatively long U-shaped channel region that travels around the recessed polysilicon gate thereby adding a depth dimension to the channel length.