Company Filing History:

17 out of 1,075

Spansion Llc.

patents

3 out of 12,867

Advanced Micro Devices Corporation

where one patent can have more than one assignee

Years Active: 2006-2013

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21 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8507971 - Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins (2013-08-13),

2. 8119477 - Memory system with protection layer to cover the memory gate stack and methods for forming same (2012-02-21),

3. 7816724 - Memory device with barrier layer (2010-10-19),

4. 7764546 - Method and architecture for fast flash memory programming (2010-07-27),

5. 7692236 - Multiple dual bit memory integrated circuit system (2010-04-06),

6. 7675104 - Integrated circuit memory system employing silicon rich layers (2010-03-09),

7. 7671403 - P-channel NAND in isolated N-well (2010-03-02),

8. 7505328 - Method and architecture for fast flash memory programming (2009-03-17),

9. 7501677 - SONOS memory with inversion bit-lines (2009-03-10),

10. 7423312 - Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins (2008-09-09),

11. 7416940 - Methods for fabricating flash memory devices (2008-08-26),

12. 7394125 - Recessed channel with separated ONO memory device (2008-07-01),

13. 7238569 - Formation method of an array source line in NAND flash memory (2007-07-03),

14. 7196008 - Aluminum oxide as liner or cover layer to spacers in memory device (2007-03-27),

15. 7167398 - System and method for erasing a memory cell (2007-01-23),

Title: The Innovative Mind of Satoshi Torii: Pioneering Memory Technologies

Introduction

Satoshi Torii, based in Sunnyvale, California, has made significant contributions to the field of non-volatile memory technologies, with an impressive portfolio of 21 patents. His work focuses on enhancing memory arrays through innovative methods and apparatuses, which have the potential to revolutionize data storage solutions.

Latest Patents

Among his latest inventions is the patent titled "Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins." This invention provides an advanced method for designing a non-volatile memory that includes arrays of memory cells featuring shallow trench isolation (STI) regions. These regions effectively separate bit lines, which in turn enhances process margins. The architecture allows for efficient organization of word and bit lines, ensuring optimal performance in data storage.

Another notable patent by Torii is the "Memory system with protection layer to cover the memory gate stack and methods for forming same." This invention pertains to a memory system that incorporates a protective layer around a memory gate stack, thereby safeguarding the charge trap layer over a semiconductor substrate. This innovation aims to improve the reliability and efficiency of memory systems in various applications.

Career Highlights

Satoshi Torii's career has been marked by significant roles in esteemed companies such as Spansion LLC and Advanced Micro Devices Corporation. His expertise in the field of memory technologies has earned him recognition among peers and industry leaders alike.

Collaborations

Throughout his career, Torii has collaborated with notable individuals, including coworkers Hidehiko Shiraiwa and Jaeyong Park. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies in the memory sector.

Conclusion

Satoshi Torii's contributions to the field of memory technology through his 21 patents emphasize his role as a key innovator. His latest inventions demonstrate a commitment to enhancing data storage solutions and reflect a deep understanding of the complexities involved in memory systems. Torii's ongoing work and collaborations continue to influence the industry, paving the way for future advancements in technology.

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