The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Jul. 21, 2006
Applicants:
Youseok Suh, Cupertino, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Lei Xue, Sunnyvale, CA (US);
Inventors:
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory device () may include a substrate (), a dielectric layer () formed on the substrate () and a charge storage element () formed on the dielectric layer (). The memory device () may also include an inter-gate dielectric () formed on the charge storage element (), a barrier layer () formed on the inter-gate dielectric () and a control gate () formed on the barrier layer (). The barrier layer () prevents reaction between the control gate () and the inter-gate dielectric ().