Lei Xue

USPTO Granted Patents = 34 (Patent Applications = 3)

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 77(Granted Patents)

Location History:

Sunnyvale, CA (US) (2006 - 2014)
San Jose, CA (US) (2010 - 2016)
Milpitas, CA (US) (2012 - 2016)
Saratoga, CA (US) (2016 - 2021)

Company Filing History:

Cypress Semiconductor Corporation

patents

3 out of 12,867

Advanced Micro Devices Corporation

where one patent can have more than one assignee

Years Active: 2006-2021

where 'Filed Patents' based on already Granted Patents

34 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11183509 - Non-volatile memory with silicided bit line contacts (2021-11-23),

2. 10692877 - Non-volatile memory with silicided bit line contacts (2020-06-23),

3. 10593688 - Split-gate semiconductor device with L-shaped gate (2020-03-17),

4. 10256137 - Self-aligned trench isolation in integrated circuits (2019-04-09),

5. 10020317 - Memory device with multi-layer channel and charge trapping layer (2018-07-10),

6. 10020316 - Split-gate semiconductor device with L-shaped gate (2018-07-10),

7. 9831114 - Self-aligned trench isolation in integrated circuits (2017-11-28),

8. 9666591 - Non-volatile memory with silicided bit line contacts (2017-05-30),

9. 9589805 - Split-gate semiconductor device with L-shaped gate (2017-03-07),

10. 9437470 - Self-aligned trench isolation in integrated circuits (2016-09-06),

11. 9431503 - Integrating transistors with different poly-silicon heights on the same die (2016-08-30),

12. 9362293 - CT-NOR differential bitline sensing architecture (2016-06-07),

13. 9252154 - Non-volatile memory with silicided bit line contacts (2016-02-02),

14. 9252026 - Buried trench isolation in integrated circuits (2016-02-02),

15. 9245895 - Oro and orpro with bit line trench to suppress transport program disturb (2016-01-26),

Title: Innovative Contributions of Lei Xue in Non-Volatile Memory Technology

Introduction

Lei Xue, a distinguished inventor based in Saratoga, California, has made significant strides in the field of non-volatile memory technology. With an impressive portfolio of 34 patents, Xue has played a pivotal role in advancing memory devices through innovative techniques and methodologies.

Latest Patents

Among his latest patents, Lei Xue developed a groundbreaking approach titled "Non-volatile memory with silicided bit line contacts." This invention addresses the challenge of bit line contacts shorting to the underlying substrate in memory devices. By utilizing a self-aligned process with oxide-nitride-oxide (ONO) nitride edges, Xue's method facilitates silicide formation in the bit line contact area. Notably, this innovation eliminates the need for bit line contact implants and rapid temperature anneal processes, making it particularly applicable for embedded flash and high-density devices, as well as advanced logic processes.

Career Highlights

Throughout his career, Lei Xue has collaborated with prominent companies in the semiconductor industry, including Spansion LLC and Cypress Semiconductor Corporation. His work has significantly influenced the development and enhancement of memory technologies.

Collaborations

In addition to his corporate affiliations, Xue has worked closely with esteemed colleagues such as Hidehiko Shiraiwa and Angela Tai Hui. These collaborations have enabled the sharing of knowledge and expertise, contributing to innovative solutions in memory device architecture.

Conclusion

Lei Xue's contributions to non-volatile memory technology illustrate the impact of innovative thinking and collaboration in advancing technological solutions. His dedication to improving memory devices is evident through his numerous patents and successful collaborations, solidifying his status as a leading inventor in the field.

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