The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jun. 24, 2016
Cypress Semiconductor Corporation, San Jose, CA (US);
Ching-Huang Lu, Fremont, CA (US);
Lei Xue, Saratoga, CA (US);
Kenichi Ohtsuka, Sunnyvale, CA (US);
Rinji Sugino, San Jose, CA (US);
Simon Siu-Sing Chan, Saratoga, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate and a method of fabricating the same are also discussed. The trench is self-aligned between the first and second devices and comprises a first filled portion and a second filled portion. The first fined portion of the trench comprises a dielectric material that forms a buried trench isolation for providing electrical isolation between the first and second devices. The self-aligned placement of the buried trench isolation allows for higher packing density without negatively affecting the operation of closely spaced devices in a high density IC.