The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
Mar. 23, 2005
Applicants:
Hidehiko Shiraiwa, San Jose, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Joong Jeon, Cupertino, CA (US);
Inventors:
Hidehiko Shiraiwa, San Jose, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Joong Jeon, Cupertino, CA (US);
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
For fabricating a memory device, spacers are formed to sides of word-line gates. In addition, aluminum oxide is formed as one of a liner layer or a cover layer to the spacers. The aluminum oxide has a chemical composition of AlOfor example. Such aluminum oxide may be used as an etch stop layer in a periphery region, a metal silicide block, and a hydrogen block for enhanced performance of the memory device.