The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2006
Filed:
Aug. 27, 2004
Hidehiko Shiraiwa, San Jose, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Hideki Arakawa, Yokohama, JP;
Masaru Yano, Kodaira, JP;
Hidehiko Shiraiwa, San Jose, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Satoshi Torii, Sunnyvale, CA (US);
Hideki Arakawa, Yokohama, JP;
Masaru Yano, Kodaira, JP;
Spansion, LLC, Sunnyvale, CA (US);
Abstract
A SONOS memory cell, formed within a semiconductor substrate, includes a bottom dielectric disposed on the semiconductor substrate, a charge trapping material disposed on the bottom dielectric, and a top dielectric disposed on the charge trapping material. Furthermore, the SONOS memory cell includes a word-line gate structure disposed on the top dielectric and at least one bit-line gate for inducing at least one inversion bit-line within the semiconductor substrate.