The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Feb. 07, 2003
Shiraiwa Hidehiko, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Shiraiwa Hidehiko, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
FASL LLC, Sunnyvale, CA (US);
Abstract
The present invention, in one embodiment, relates to a process for fabricating a semiconductor device that is resistant to hot carrier induced stress. The method includes the steps of forming an oxide layer on a semiconductor substrate, the oxide layer and the semiconductor substrate forming a substrate-oxide interface, in which the interface includes at least one of silicon-hydrogen bonds or dangling silicon bonds; and exposing the interface to ultraviolet radiation and an atmosphere comprising at least one gas having at least atom capable of forming a silicon-atom bond under conditions sufficient to convert at least a portion of the at least one of silicon-hydrogen bonds or dangling silicon bonds to silicon-atom bonds.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile