The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Jul. 12, 2004
Jaeyong Park, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Inkuk Kang, Saratoga, CA (US);
Tazrien Kamal, San Jose, CA (US);
Amir H. Jafarpour, Pleasanton, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Inkuk Kang, Saratoga, CA (US);
Tazrien Kamal, San Jose, CA (US);
Amir H. Jafarpour, Pleasanton, CA (US);
FASL, LLC, Sunnyvale, CA (US);
Abstract
A SONOS flash memory device, including a semiconductor substrate; an ONO structure formed on the semiconductor substrate, the ONO structure including a bottom oxide layer, a dielectric charge storage layer and a top oxide layer, the bottom oxide layer having a super-stoichiometric oxygen content and an oxygen vacancy content of about 10/cmor less, wherein the bottom oxide layer exhibits a reduced charge leakage relative to a bottom oxide layer having a stoichiometric or sub-stoichiometric oxygen content and a greater number of oxygen vacancies. In one embodiment, the bottom oxide layer has an oxygen vacancy content of substantially zero.