The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Jun. 08, 2005
Hajime Wada, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Rinji Sugino, San Jose, CA (US);
Hajime Wada, Sunnyvale, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Hirokazu Tokuno, Cupertino, CA (US);
Rinji Sugino, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method for forming a memory device is provided. A memory cell stack is formed over a substrate. The memory cell stack includes a first layer formed over the substrate and a second layer formed over the first layer. A dielectric layer is formed over the first and second layers and the substrate. The dielectric layer is etched to expose at least an upper surface of the memory cell stack. The second layer is etched to recess the second layer with respect to an upper surface of the dielectric layer. A silicide region is formed on the second layer in the memory cell stack, where the silicide region in each memory cell stack is bounded by the dielectric layer extending above the upper surface of the memory cell stack.