The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Jul. 11, 2003
Applicants:
Minh Van Ngo, Fremont, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Pei Yuan Gao, San Jose, CA (US);
Inventors:
Minh Van Ngo, Fremont, CA (US);
Mark Ramsbey, Sunnyvale, CA (US);
Tazrien Kamal, San Jose, CA (US);
Pei Yuan Gao, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A Si-rich silicon oxide layer having reduced UV transmission is deposited by PECVD, on an interlayer dielectric, prior to metallization, thereby reducing V. Embodiments include depositing a UV opaque Si-rich silicon oxide layer having an R.I. of 1.7 to 2.0.
Quick Actions:
Ngo, Minh. (2006). Pecvd silicon-rich oxide layer for reduced uv charging (U.S. Patent No. 7060554). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7060554
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile