The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2006
Filed:
Jun. 28, 2004
Wei Zheng, Santa Clara, CA (US);
Chi Chang, Redwood City, CA (US);
Tazrien Kamal, San Jose, CA (US);
Wei Zheng, Santa Clara, CA (US);
Chi Chang, Redwood City, CA (US);
Tazrien Kamal, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A non-volatile memory device includes a semiconductor substrate and an N-type source and drain within the substrate. An oxide-nitride-oxide (ONO) stack is formed over the substrate. The ONO stack includes a thin bottom oxide layer. A Ppolysilicon gate electrode is formed over the ONO stack. The memory device is operative to perform a channel erase operation in which a pair of charge storing cells within the nitride layer are erased simultaneously.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile