The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Dec. 20, 2006
David M. Rogers, Sunnyvale, CA (US);
Mimi X. Qian, Campbell, CA (US);
Kwadwo A. Appiah, Newark, CA (US);
Mark Randolph, San Jose, CA (US);
Michael A. Vanbuskirk, Saratoga, CA (US);
Tazrien Kamal, San Jose, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Yi He, Fremont, CA (US);
Wei Zheng, Santa Clara, CA (US);
David M. Rogers, Sunnyvale, CA (US);
Mimi X. Qian, Campbell, CA (US);
Kwadwo A. Appiah, Newark, CA (US);
Mark Randolph, San Jose, CA (US);
Michael A. VanBuskirk, Saratoga, CA (US);
Tazrien Kamal, San Jose, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Yi He, Fremont, CA (US);
Wei Zheng, Santa Clara, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A semiconductor device () for improved charge dissipation protection includes a substrate (), a layer of semiconductive or conductive material (), one or more thin film devices () and a charge passage device (). The thin film devices () are connected to the semiconductive or conductive layer () and the charge passage device () is coupled to the thin film devices () and to the substrate () and provides a connection from the thin film devices () to the substrate () to dissipate charge from the semiconductive/conductive layer () to the substrate ().