The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Jun. 08, 2005
Minh Van Ngo, Fremont, CA (US);
Ning Cheng, San Jose, CA (US);
Wenmei LI, Sunnyvale, CA (US);
Angela T. Hui, Fremont, CA (US);
Pei-yuan Gao, San Jose, CA (US);
Robert A. Huertas, Hollister, CA (US);
Minh Van Ngo, Fremont, CA (US);
Ning Cheng, San Jose, CA (US);
Wenmei Li, Sunnyvale, CA (US);
Angela T. Hui, Fremont, CA (US);
Pei-Yuan Gao, San Jose, CA (US);
Robert A. Huertas, Hollister, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a memory device includes forming a first dielectric layer over a substrate and forming a charge storage element over the first dielectric layer. The method also includes forming a second dielectric layer over the charge storage element and forming a control gate over the second dielectric layer. The method further includes depositing an interlayer dielectric over the control gate at a high temperature.