The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2015
Filed:
Dec. 05, 2013
Applicant:
Intermolecular, Inc., San Jose, CA (US);
Inventors:
Federico Nardi, Palo Alto, CA (US);
Randall J. Higuchi, San Jose, CA (US);
Robert A. Huertas, Hollister, CA (US);
Yun Wang, San Jose, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); H01L 45/16 (2013.01);
Abstract
Forming a resistive switching layer having a vertical interface can generate defects confined along the interface between two electrodes. The confined defects can form a pre-determined region for filament formation and dissolution, leading to low power resistive switching and low program voltage or current variability. In addition, the filament forming process of the resistive memory device can be omitted due to the existence of the confined defects.