The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Dec. 01, 2004
Inkuk Kang, San Jose, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Calvin T. Gabriel, Cupertino, CA (US);
Inkuk Kang, San Jose, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Calvin T. Gabriel, Cupertino, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc, Austin, TX (US);
Abstract
Methods for eliminating and/or mitigating bridging and/or leakage caused by the contamination of a dielectric layer with fragments and/or residues of a conductive material are disclosed. The methods involve exposing a semiconductor substrate with a dielectric layer contaminated with fragments and/or residues of conductive materials to one or more conductor and/or dielectric etches. The disclosure by eliminating and/or mitigating metal bridging and/or leakage can provide one or more of the following advantages: high device reliability, decreased manufacturing cost, more efficient metallization, and increased performance.