The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2014
Filed:
Jul. 31, 2006
Lei Xue, Sunnyvale, CA (US);
Rinji Sugino, San Jose, CA (US);
Youseok Suh, Cupertino, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Meng Ding, Sunnyvale, CA (US);
Shenqing Fang, Fremont, CA (US);
Joong Jeon, Los Altos, CA (US);
Lei Xue, Sunnyvale, CA (US);
Rinji Sugino, San Jose, CA (US);
YouSeok Suh, Cupertino, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Meng Ding, Sunnyvale, CA (US);
Shenqing Fang, Fremont, CA (US);
Joong Jeon, Los Altos, CA (US);
Globalfoundries Inc., Grand Cayman, KY;
Spansion LLC, Sunnyvale, CA (US);
Abstract
A memory cell system is provided including forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming a second insulator layer over the charge trap layer, forming a top blocking intermediate layer over the second insulator layer, and forming a contact layer over the top blocking intermediate layer.