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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Meng Ding

This inventor holds 32 USPTO granted patents and 1 published patent application, primarily in Flash Memory Technology. Top assignees: Spansion LLC., Hitachi Global Storage Technologies Netherlands B.v., Advanced Micro Devices Corporation. Active years: 2006-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Meng Ding. Retrieved from https://idiyas.com/inventor/meng-ding

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 32 

% Patents Active = 59.4

Average Co-Inventor Count = 4.5

ph-index = 7

Forward Citations = 223(Granted Patents)


Location History:

  • Mountian View, CA (US) (2007)
  • Mountain View, CA (US) (2006 - 2009)
  • San Jose, CA (US) (2010 - 2015)
  • Sunnyvale, CA (US) (2008 - 2020)

Company Filing History:

goldMedal19 out of 1,075 
 
Spansion LLC.
 patents
silverMedal9 out of 2,636 
 
Hitachi Global Storage Technologies Netherlands B.v.
 patents
bronzeMedal4 out of 13,185 
 
Advanced Micro Devices Corporation
 patents
4. 2 out of 3,597 
 
Cypress Semiconductor Corporation
 patents
5. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
6. 1 out of 52 
 
Hitachi Global Storage Technologies
 patents
7. 1 out of 33 
 
Monterey Research, LLC
 patents
where one patent can have more than one assignee

Years Active: 2006-2020

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Areas of Expertise:
Flash Memory Cell
Charge Trap
Memory Device
Self-Aligned STI
Nitride Layers
Leakage Current
NPN/PNP Diodes
Magnetoresistive Sensor
Electrostatic Discharge
Read Sensor
High-K Dielectric
Memory Fabrication
32 patents (USPTO):Explore Patents
1. 10622370 - System and method for manufacturing self-aligned STI with single poly (2020-04-14),
2. 9276007 - System and method for manufacturing self-aligned STI with single poly (2016-03-01),
3. 9190531 - Flash memory cell with flair gate (2015-11-17),
4. 8809936 - Memory cell system with multiple nitride layers (2014-08-19),
5. 8803216 - Memory cell system using silicon-rich nitride (2014-08-12),
6. 8642441 - Self-aligned STI with single poly for manufacturing a flash memory device (2014-02-04),
7. 8587049 - Memory cell system with charge trap (2013-11-19),
8. 8404541 - Strapping contact for charge protection (2013-03-26),
9. 8367537 - Flash memory cell with a flair gate (2013-02-05),
10. 8143661 - Memory cell system with charge trap (2012-03-27),
11. 8031528 - Flash memory programming and verification with reduced leakage current (2011-10-04),
12. 7750407 - Strapping contact for charge protection (2010-07-06),
13. 7630253 - Flash memory programming and verification with reduced leakage current (2009-12-08),
14. 7573103 - Back-to-back NPN/PNP protection diodes (2009-08-11),
15. 7564091 - Memory device and methods for its fabrication (2009-07-21),

Title: The Innovative Journey of Meng Ding

Introduction: Meng Ding is a visionary inventor based in Sunnyvale, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Meng Ding holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a background in engineering and a passion for problem-solving, Meng Ding has had a successful career working for leading tech companies, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Meng Ding has collaborated with top researchers, engineers, and scientists to bring cutting-edge ideas to life. His collaborative spirit and innovative mindset have led to the development of groundbreaking technologies.

Conclusion: Meng Ding's relentless pursuit of innovation and his dedication to creating a better future through technology make him a true pioneer in the field of inventions. His work continues to inspire and shape the technological landscape for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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