The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 19, 2013
Filed:
Jul. 17, 2006
Applicants:
Meng Ding, Sunnyvale, CA (US);
Amol Ramesh Joshi, Sunnyvale, CA (US);
Lei Xue, Sunnyvale, CA (US);
Takashi Orimoto, Sunnyvale, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Inventors:
Meng Ding, Sunnyvale, CA (US);
Amol Ramesh Joshi, Sunnyvale, CA (US);
Lei Xue, Sunnyvale, CA (US);
Takashi Orimoto, Sunnyvale, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Assignees:
Spansion, LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A memory cell system is provided forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming an intermediate layer over the charge trap layer, and forming a second insulator layer with the intermediate layer.