The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Sep. 11, 2009
Applicants:

Ashot Melik-martirosian, Sunnyvale, CA (US);

Ed Runnion, Santa Clara, CA (US);

Mark Randolph, San Jose, CA (US);

Meng Ding, Sunnyvale, CA (US);

Inventors:

Ashot Melik-Martirosian, Sunnyvale, CA (US);

Ed Runnion, Santa Clara, CA (US);

Mark Randolph, San Jose, CA (US);

Meng Ding, Sunnyvale, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory system configured in accordance with an example embodiment of the invention employs a virtual ground array architecture. During programming operations, target memory cells are biased with a positive source bias voltage to reduce or eliminate leakage current that might otherwise conduct through the target memory cells. A positive source bias voltage may also be applied to target memory cells during verification operations (program verify, soft program verify, erase verify) to reduce or eliminate leakage current that might otherwise introduce errors in the verification operations.


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