Company Filing History:
Years Active: 2009-2011
Title: Ed Runnion: Innovator in Flash Memory Technology
Introduction
Ed Runnion is a notable inventor based in Santa Clara, CA (US). He has made significant contributions to the field of flash memory technology, holding 2 patents that showcase his innovative approach to reducing leakage current in memory systems.
Latest Patents
One of Ed Runnion's latest patents focuses on "Flash memory programming and verification with reduced leakage current." This invention employs a virtual ground array architecture to enhance the performance of flash memory systems. During programming operations, target memory cells are biased with a positive source bias voltage, which helps to reduce or eliminate leakage current that could otherwise affect the functionality of the memory cells. Additionally, this positive source bias voltage is also applied during verification operations, such as program verify, soft program verify, and erase verify, to minimize the risk of errors in these critical processes.
Career Highlights
Ed Runnion has built a successful career in the technology sector, particularly in the realm of memory systems. His work has been instrumental in advancing the efficiency and reliability of flash memory technology. He is currently associated with Spansion LLC, a company known for its innovative memory solutions.
Collaborations
Throughout his career, Ed has collaborated with talented professionals in the field, including Ashot Melik-Martirosian and Mark W Randolph. These collaborations have contributed to the development of cutting-edge technologies in memory systems.
Conclusion
Ed Runnion's contributions to flash memory technology highlight his innovative spirit and dedication to improving electronic systems. His patents reflect a commitment to advancing the field and addressing challenges in memory performance.