The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Aug. 27, 2008
Chungho Lee, Sunnyvale, CA (US);
Ashot Melik-martirosian, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Amol Joshi, Sunnyvale, CA (US);
Meng Ding, Sunnyvale, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Ashot Melik-Martirosian, Sunnyvale, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Amol Joshi, Sunnyvale, CA (US);
Meng Ding, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A semiconductor memory device and a method for its fabrication are provided. In accordance with one embodiment of the invention the method comprises the steps of forming a gate insulator and a gate electrode overlying a semiconductor substrate. The gate insulator is etched to form an undercut opening beneath an edge of the gate electrode and the undercut opening is filled with a layered structure comprising a charge trapping layer sandwiched between layers of oxide and nitride. A region of the semiconductor substrate is impurity doped to form a bit line aligned with the gate electrode, and a conductive layer is deposited and patterned to form a word line coupled to the gate electrode.