The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Mar. 20, 2006
Applicants:
Meng Ding, Sunnyvale, CA (US);
Lei Xue, Sunnyvale, CA (US);
Mark Randolph, San Jose, CA (US);
Chi Chang, Redwood City, CA (US);
Robert Bertram Ogle, Jr., San Jose, CA (US);
Inventors:
Meng Ding, Sunnyvale, CA (US);
Lei Xue, Sunnyvale, CA (US);
Mark Randolph, San Jose, CA (US);
Chi Chang, Redwood City, CA (US);
Robert Bertram Ogle, Jr., San Jose, CA (US);
Assignees:
Spansion, LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 29/792 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 27/115 (2013.01); H01L 27/11568 (2013.01); H01L 29/7923 (2013.01); H01L 29/513 (2013.01);
Abstract
A memory cell system including providing a substrate, forming a charge-storing stack having silicon-rich nitride on the substrate, and forming a gate on the charge-storing stack.