Robert Bertram Ogle, Jr

Title: The Innovations of Robert Bertram Ogle, Jr.

Introduction

Robert Bertram Ogle, Jr. is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of memory technology, holding a total of 5 patents. His work has been instrumental in advancing memory cell systems and processes.

Latest Patents

Ogle's latest patents include a memory cell system using silicon-rich nitride. This innovation involves providing a substrate, forming a charge-storing stack with silicon-rich nitride on the substrate, and creating a gate on the charge-storing stack. Another significant patent is the process for treating ONO dielectric film of a floating gate memory cell. This process entails depositing a silicon dioxide layer on a silicon nitride layer for an ONO stack of a floating gate transistor, followed by annealing in a nitrogen oxide or nitrous oxide ambient environment.

Career Highlights

Throughout his career, Ogle has worked with prominent companies such as Advanced Micro Devices Corporation and Spansion LLC. His expertise in memory technology has made him a valuable asset in these organizations.

Collaborations

Ogle has collaborated with talented individuals in the field, including Ming-Yin Hao and Derick J. Wristers. Their combined efforts have contributed to the development of innovative memory technologies.

Conclusion

Robert Bertram Ogle, Jr. is a distinguished inventor whose work in memory technology has led to several important patents. His contributions continue to influence the industry and pave the way for future innovations.