The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Aug. 10, 2001
Applicant:
Inventors:
Robert Bertram Ogle, Jr., San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
A process to deposit a silicon dioxide layer on a silicon nitride layer for an ONO stack of a floating gate transistor. Silicon dioxide is deposited on a silicon nitride layer and annealed in a batch furnace or a single wafer rapid thermal anneal tool in a nitrogen oxide (NO) or nitrous oxide (N O) ambient environment.
Quick Actions:
Ogle, Jr., Robert. (2004). Process for treating ono dielectric film of a floating gate memory cell (U.S. Patent No. 6709927). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6709927
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile