The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2006

Filed:

Aug. 17, 2004
Applicants:

David Gaun, Brookline, MA (US);

Stuart Spitzer, Lynnfield, MA (US);

Nicolay F Yudanov, Brookline, MA (US);

Inventors:

David Gaun, Brookline, MA (US);

Stuart Spitzer, Lynnfield, MA (US);

Nicolay F Yudanov, Brookline, MA (US);

Assignee:

FASL, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems and methodologies are provided for simplifying a polymer memory cell's operation by employing a post polymer growth treatment to form ionic or super ionic metal compounds therein. Such post polymer growth treatment facilitates distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell, and mitigates (or eliminates) a need for initialization procedures. Moreover, the post treatment of the present invention can also facilitate controlling a distribution of various thresholds (e.g., write and erase threshold), and set them to predetermined values Accordingly, variability in threshold values of polymer memory cells that can result from initialization processes can be mitigated (or eliminated), and thicker polymer layers can be employed without an initialization penalty.


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