The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Dec. 09, 2003
Applicants:
Arvind Halliyal, Cupertino, CA (US);
Tazrien Kamal, San Jose, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Inventors:
Arvind Halliyal, Cupertino, CA (US);
Tazrien Kamal, San Jose, CA (US);
Hidehiko Shiraiwa, San Jose, CA (US);
Jean Y. Yang, Sunnyvale, CA (US);
Assignee:
FASL, LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
Process for fabricating a charge trapping dielectric flash memory device including steps of providing a semiconductor substrate; forming on the semiconductor substrate a bottom oxide layer; depositing on the bottom oxide layer a nitride layer, the deposited nitride layer having a first hydrogen content; and applying a treatment to reduce the first hydrogen content to a second hydrogen content.