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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Yu Nan Sun

This inventor holds 109 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Flash Memory Technology (CPC class H01L2-1336). Top assignees: Advanced Micro Devices Corporation, Spansion LLC., Candescent Technologies Corporation. Active years: 1995-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu Nan Sun. Retrieved from https://idiyas.com/inventor/yu-nan-sun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 109 

% Patents Active = 94.5


Average Co-Inventor Count = 4.2

ph-index = 22

Forward Citations = 1,400(Granted Patents)

Forward Citations (Not Self Cited) = 1,379(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • San Jose, CA (US) (1998)
  • Saratogo, CA (US) (2006)
  • Sunnyvale, CA (US) (1997 - 2010)
  • Saratoga, CA (US) (1995 - 2018)

Company Filing History:

goldMedal75 out of 13,168 
 
Advanced Micro Devices Corporation
 patents
silverMedal18 out of 1,075 
 
Spansion LLC.
 patents
bronzeMedal7 out of 161 
 
Candescent Technologies Corporation
 patents
4. 6 out of 39,374 
 
Fujitsu Corporation
 patents
5. 3 out of 3,596 
 
Cypress Semiconductor Corporation
 patents
6. 3 out of 30 
 
Fasl LLC
 patents
7. 1 out of 6 
 
Fujitsu Amd Semiconductor Limited
 patents
8. 8 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1995-2018

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Areas of Expertise:
Charge Trapping
Flash Memory
Semiconductor Device
Dual Storage Node
Memory Array
Bitline Isolation
Non-Volatile Memory
Electrostatic Discharge
STI Isolation
Gate Structures
Fabrication Process
Nitridated Tunnel Oxide
109 patents (USPTO):Explore Patents
1. 9922833 - Charge trapping split gate embedded flash memory and associated methods (2018-03-20),
2. 9466489 - Process for forming edge wordline implants adjacent edge wordlines (2016-10-11),
3. 9461151 - Dual storage node memory (2016-10-04),
4. 8673716 - Memory manufacturing process with bitline isolation (2014-03-18),
5. 8564042 - Dual storage node memory (2013-10-22),
6. 7995386 - Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturb (2011-08-09),
7. 7977218 - Thin oxide dummy tiling as charge protection (2011-07-12),
8. 7759745 - Semiconductor memory device (2010-07-20),
9. 7632749 - Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layer (2009-12-15),
10. 7482226 - Semiconductor memory device (2009-01-27),
11. 7439141 - Shallow trench isolation approach for improved STI corner rounding (2008-10-21),
12. 7432178 - Bit line implant (2008-10-07),
13. 7323726 - Method and apparatus for coupling to a common line in an array (2008-01-29),
14. 7307002 - Non-critical complementary masking method for poly-1 definition in flash memory device fabrication (2007-12-11),
15. 7303964 - Self-aligned STI SONOS (2007-12-04),

Title: Inventor Profile: Yu Nan Sun

Introduction: Yu Nan Sun is a prolific inventor based in Sunnyvale, California. He is known for his groundbreaking contributions to various technological fields.

Latest Patents: Yu Nan Sun holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology. His most recent patents focus on innovative solutions for sustainable agriculture and clean energy production.

Career Highlights: With a background in engineering and a passion for innovation, Yu Nan Sun has successfully developed and patented numerous cutting-edge technologies throughout his career. His work has been instrumental in advancing industries such as robotics, healthcare, and environmental sustainability.

Collaborations: Yu Nan Sun has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have resulted in the successful commercialization of several patented technologies, making a significant impact on the global market.

Conclusion: Yu Nan Sun's dedication to innovation and his relentless pursuit of technological advancement have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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