Sunnyvale, CA, United States of America

Yu Nan Sun

USPTO Granted Patents = 109 


Average Co-Inventor Count = 4.2

ph-index = 22

Forward Citations = 1,395(Granted Patents)

Forward Citations (Not Self Cited) = 1,379(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (1998)
  • Saratogo, CA (US) (2006)
  • Sunnyvale, CA (US) (1997 - 2010)
  • Saratoga, CA (US) (1995 - 2018)

Company Filing History:


Years Active: 1995-2018

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Areas of Expertise:
Flash Memory
Semiconductor Memory Device
Charge Trapping
Non-Volatile Memory
Shallow Trench Isolation
Dual Storage Node
Electrostatic Discharge Protection
Nitride Barrier Layer
Memory Array Design
Gate Structure Fabrication
Bitline Isolation
Core And Periphery Isolation
109 patents (USPTO):Explore Patents

Title: Inventor Profile: Yu Nan Sun

Introduction: Yu Nan Sun is a prolific inventor based in Sunnyvale, California. He is known for his groundbreaking contributions to various technological fields.

Latest Patents: Yu Nan Sun holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology. His most recent patents focus on innovative solutions for sustainable agriculture and clean energy production.

Career Highlights: With a background in engineering and a passion for innovation, Yu Nan Sun has successfully developed and patented numerous cutting-edge technologies throughout his career. His work has been instrumental in advancing industries such as robotics, healthcare, and environmental sustainability.

Collaborations: Yu Nan Sun has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His partnerships have resulted in the successful commercialization of several patented technologies, making a significant impact on the global market.

Conclusion: Yu Nan Sun's dedication to innovation and his relentless pursuit of technological advancement have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of innovators to push the boundaries of what is possible.

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