The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Oct. 22, 2002
Unsoon Kim, Santa Clara, CA (US);
Yu Sun, Saratoga, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Harpreet K. Sachar, Sunnyvale, CA (US);
Mark S. Chang, Los Altos, CA (US);
Unsoon Kim, Santa Clara, CA (US);
Yu Sun, Saratoga, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Harpreet K. Sachar, Sunnyvale, CA (US);
Mark S. Chang, Los Altos, CA (US);
Spansion, LLC, Sunnyvale, CA (US);
Abstract
A method for performing shallow trench isolation during semiconductor fabrication that improves trench corner rounding is disclosed. The method includes etching trenches into a silicon substrate between active regions, and performing a double liner oxidation process on the trenches. The method further includes performing a double sacrificial oxidation process on the active regions, wherein corners of the trenches are substantially rounded by the four oxidation processes.