The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Apr. 13, 2004
Hiroyuki Ogawa, Sunnyvale, CA (US);
Yider Wu, Campbell, CA (US);
Nian Yang, Mountain View, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Yu Sun, Saratoga, CA (US);
Hiroyuki Ogawa, Sunnyvale, CA (US);
Yider Wu, Campbell, CA (US);
Nian Yang, Mountain View, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Yu Sun, Saratoga, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A semiconductor device is disclosed and provided. The semiconductor device includes a pad metal layer having a perimeter area and a center area. Further, the semiconductor device has a lower metal layer having a plurality of apertures below the center area of the pad metal layer. Moreover, an interlayer dielectric is formed between the pad metal layer and the lower metal layer. In an embodiment, the semiconductor device also includes a plurality of vias formed in the interlayer dielectric. The vias electrically couple the pad metal layer and the lower metal layer. Additionally, the vias are located below the perimeter area of the pad metal layer.