Mountain View, CA, United States of America

Nian Niles Yang

USPTO Granted Patents = 161 

 

Average Co-Inventor Count = 3.2

ph-index = 15

Forward Citations = 1,018(Granted Patents)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (2002 - 2006)
  • Mountain View, CA (US) (2004 - 2024)

Company Filing History:


Years Active: 2002-2025

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161 patents (USPTO):

Title: Nian Niles Yang: Innovator in Efficient Data Storage Techniques

Introduction:

Nian Niles Yang, a resident of Mountain View, CA, is a distinguished inventor and innovator in the field of data storage technology. With an impressive record of 159 patents, Yang has made significant contributions to the advancement of efficient data storage techniques. This article will provide insights into Yang's latest patents, career highlights, and notable collaborations, showcasing his valuable expertise in the industry.

Latest Patents:

One of Yang's recent patents is titled "Level Dependent Error Correction Code Protection in Multi-Level Non-Volatile Memory." This patent introduces a method, apparatus, and system that utilize error correction code (ECC) protection in multi-level non-volatile memory. By determining the coding rate based on an attribute of the multi-level page, the ECC codeword can be effectively generated and stored on the respective page. This innovation improves the reliability and error correction capabilities of the data stored in non-volatile memory.

Another significant patent is titled "Efficient Data Storage Usage Associated with Ungraceful Shutdown." This invention addresses the efficient utilization of storage blocks after ungraceful shutdown events. The patent proposes a mechanism where the data storage device alerts the host device about the ongoing block recovery process after a shutdown event, ensuring that the block is not prematurely accessed for new data. By monitoring the availability of free blocks, the host device receives timely warnings if a power loss halt is triggered, allowing for appropriate action to be taken.

Career Highlights:

Throughout his career, Nian Niles Yang has made notable contributions to various renowned companies in the industry. Yang has worked at Sandisk Technologies Inc., a leading provider of flash storage solutions, where he actively contributed to the development of cutting-edge storage technologies. Additionally, he has been associated with Advanced Micro Devices Corporation, a prominent semiconductor company known for its innovation in the computing industry. Yang's expertise and dedication have undoubtedly played a pivotal role in shaping the future of data storage.

Collaborations:

Yang has collaborated with esteemed professionals in the field. One of his notable coworkers is Zhigang Wang, with whom he has presumably worked closely on projects related to data storage innovations. Tien-Chun Yang is another collaborator who has contributed to Yang's research and development endeavors. These collaborations highlight the collaborative nature of the field and the importance of collective efforts in driving innovation forward.

Conclusion:

Nian Niles Yang, a highly accomplished inventor and innovator in the realm of data storage, has significantly contributed to the advancement of efficient data storage techniques. With an impressive repertoire of patents and significant career highlights at prominent technology companies, Yang has left an indelible mark in the industry. His latest patents, such as level-dependent error correction code protection in multi-level non-volatile memory and efficient data storage usage associated with ungraceful shutdowns, showcase his commitment to improving data reliability and maximizing storage efficiency. Yang's collaborations with esteemed colleagues further highlight the collaborative nature of innovation in this field. As a visionary in the industry, Yang continues to shape the landscape of data storage, inspiring future advancements for enhanced storage capabilities.

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