The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2022

Filed:

Mar. 26, 2021
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Nian Yang, Mountain View, CA (US);

Sahil Sharma, San Jose, CA (US);

Harish Singidi, Fremont, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/08 (2016.01); G11C 29/42 (2006.01); G11C 29/44 (2006.01); G11C 29/24 (2006.01); G06F 12/0882 (2016.01); G06F 12/0811 (2016.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/42 (2013.01); G06F 12/0811 (2013.01); G06F 12/0882 (2013.01); G11C 29/24 (2013.01); G11C 29/44 (2013.01); G11C 29/50004 (2013.01); G06F 2212/7201 (2013.01);
Abstract

A method, apparatus, and system for level dependent error correction code protection in multi-level non-volatile memory. A write command to write data to a non-volatile memory array may be received. At least one multi-level page of multi-level storage cells may be determined for the write data. A coding rate for the write data of the at least one multi-level page may be determined based on an attribute of the at least one multi-level page. An ECC codeword may be generated that satisfies the coding rate and includes the write data. The ECC codeword may then be stored on the at least one multi-level page.


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