The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 07, 2008

Filed:

Oct. 21, 2005
Applicants:

Angela T. Hui, Fremont, CA (US);

Jean Yang, Sunnyvale, CA (US);

Yu Sun, Saratoga, CA (US);

Mark T. Ramsbey, Sunnyvale, CA (US);

Weidong Qian, Sunnyvale, CA (US);

Inventors:

Angela T. Hui, Fremont, CA (US);

Jean Yang, Sunnyvale, CA (US);

Yu Sun, Saratoga, CA (US);

Mark T. Ramsbey, Sunnyvale, CA (US);

Weidong Qian, Sunnyvale, CA (US);

Assignees:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for performing a bit line implant is disclosed. The method includes forming a group of structures on an oxide-nitride-oxide stack of a semiconductor device. Each structure of the group of structures includes a polysilicon portion and a hard mask portion. A first structure of the group of structures is separated from a second structure of the group of structures by less than 100 nanometers. The method further includes using the first structure and the second structure to isolate a portion of the semiconductor device for the bit line implant.


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