The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2010
Filed:
Jan. 23, 2007
Hideki Komori, Kawasaki, JP;
Hisayuki Shimada, Aizuwakamatsu, JP;
Yu Sun, Sunnyvale, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Hideki Komori, Kawasaki, JP;
Hisayuki Shimada, Aizuwakamatsu, JP;
Yu Sun, Sunnyvale, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Fujitsu Limited, Kawasaki, JP;
Spansion LLC, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A drain () includes a lightly-doped shallow impurity region () aligned with a control gate (), and a heavily-doped deep impurity region () aligned with a sidewall film () and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (). The lightly-doped shallow impurity region () leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion () is provided to the heavily-doped impurity region () to reduce the contact resistance at the drain ().