The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Apr. 04, 2005
Unsoon Kim, San Jose, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Yu Sun, Saratoga, CA (US);
Krishnashree Achuthan, San Ramon, CA (US);
Christopher H. Raeder, Austin, TX (US);
Christopher M. Foster, Austin, TX (US);
Harpreet Kaur Sachar, Sunnyvale, CA (US);
Kashmir Singh Sahota, Fremont, CA (US);
Unsoon Kim, San Jose, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Yu Sun, Saratoga, CA (US);
Krishnashree Achuthan, San Ramon, CA (US);
Christopher H. Raeder, Austin, TX (US);
Christopher M. Foster, Austin, TX (US);
Harpreet Kaur Sachar, Sunnyvale, CA (US);
Kashmir Singh Sahota, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A method is disclosed for the definition of the poly-1 layer in a semiconductor wafer. A non-critical mask is used to recess field oxides in the periphery prior to poly-1 deposition by an amount equal to the final poly-1 thickness. A complimentary non-critical mask is used to permit CMP of the core to expose the tops of core oxide mesas from the shallow isolation trenches.