The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Sep. 20, 2013
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Fred T. K. Cheung, San Jose, CA (US);
Hiroyuki Kinoshita, Sunnyvale, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Yu Sun, Saratoga, CA (US);
Chi Chang, Redwood City, CA (US);
Assignee:
CYRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66833 (2013.01); G11C 16/0475 (2013.01); G11C 16/3418 (2013.01); G11C 16/3427 (2013.01); H01L 27/115 (2013.01); H01L 27/11521 (2013.01);
Abstract
An embodiment of the present invention is directed to a memory cell. The memory cell includes a first charge storage element and a second charge storage element, wherein the first and second charge storage elements include nitrides. The memory cell further includes an insulating layer formed between the first and second charge storage elements. The insulating layer provides insulation between the first and second charge storage elements.