Fred T K Cheung

Title: Fred T K Cheung: Innovator in Memory Technology

Introduction

Fred T K Cheung is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory technology, holding a total of 9 patents. His work focuses on advancements in memory cell design and fabrication processes.

Latest Patents

One of his latest patents is titled "Dual storage node memory." This invention is directed to a memory cell that includes a first charge storage element and a second charge storage element, both of which consist of nitrides. An insulating layer is formed between these elements to provide necessary insulation. Another significant patent is "Method of formation of gate stack spacer and charge storage materials having reduced hydrogen content in charge trapping dielectric flash memory device." This patent outlines a process for fabricating a charge trapping dielectric flash memory device, detailing steps that include providing a semiconductor substrate and forming an oxide layer over the gate stack.

Career Highlights

Throughout his career, Fred T K Cheung has worked with various companies, including Advanced Micro Devices Corporation. His experience in the industry has allowed him to develop innovative solutions that enhance memory technology.

Collaborations

Fred has collaborated with notable professionals in the field, including Mark T Ramsbey and Arvind Halliyal. Their combined expertise has contributed to the advancement of memory technologies.

Conclusion

Fred T K Cheung is a distinguished inventor whose work in memory technology has led to multiple patents and significant advancements in the field. His contributions continue to influence the development of innovative memory solutions.