The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
May. 05, 2003
Applicant:
Inventors:
Hidehiko Shiraiwa, San Jose, CA (US);
Jaeyong Park, Sunnyvale, CA (US);
Fred T K Cheung, San Jose, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/126 ; H01L 2/1324 ;
U.S. Cl.
CPC ...
H01L 2/126 ; H01L 2/1324 ;
Abstract
The present invention, in one embodiment, relates to a process for fabricating a semiconductor device that is less susceptible to performance degradation caused by hydrogen contamination. The method includes the steps for removing unwanted hydrogen bonds by exposing the hydrogen bonds to ultraviolet radiation sufficient to break the bond and annealing in an atmosphere comprising at least one gas having at least one atom capable of forming bonds that replace the hydrogen bonds.