The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2003
Filed:
Oct. 17, 2002
Applicant:
Inventors:
Effiong Ibok, Sunnyvale, CA (US);
Wei Zheng, Santa Clara, CA (US);
Nicholas H. Tripsas, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Fred T K Cheung, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
In one embodiment, a method of making a gate stack semiconductor device is disclosed. The method comprises the steps of: forming a tunnel oxide layer over a p-type semiconductor substrate; forming a floating gate over the tunnel oxide layer by first forming an n-type polysilicon layer and subjecting the n-type polysilicon layer to nitridation, and then forming a p-type polysilicon layer over the nitridated n-type polysilicon layer; and forming a high-K insulating layer over the p-type polysilicon layer.