San Jose, CA, United States of America

Nicholas H Tripsas

This inventor holds 57 USPTO granted patents and 2 EPO patents, primarily in Memory Devices (CPC class H01L). Top assignees: Advanced Micro Devices Corporation, Spansion LLC.. Active years: 1998-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nicholas H Tripsas. Retrieved from https://idiyas.com/inventor/nicholas-h-tripsas

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.7


Average Co-Inventor Count = 3.5

ph-index = 15

Forward Citations = 1,164(Granted Patents)

Forward Citations (Not Self Cited) = 1,138(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:


Years Active: 1998-2013

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Areas of Expertise:
Memory Cell
Non-Volatile Memory
Organic Memory
Silicide Interconnect
Dielectric Material
Laser Processing
Stacked Memory
High-K Dielectric
Copper Vias
Polymer Memory
Metal-Insulator-Metal
Flash Memory
57 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Nicholas H. Tripsas

Introduction

Nicholas H. Tripsas, based in San Jose, California, is a prolific inventor with an impressive portfolio of 57 patents. His work primarily focuses on advancing semiconductor technologies, contributing significantly to the field through innovative solutions that enhance the performance and reliability of electronic devices.

Latest Patents

Among his latest innovations are two notable patents. The first, titled "Buried Silicide Local Interconnect with Sidewall Spacers and Method for Making the Same," describes a method for creating a buried local interconnect. This process involves counterdoping a region of a doped substrate to form an isolation region. A hardmask is patterned on this substrate, followed by etching a recess through the hardmask into the counterdoped region. The resulting structure includes dielectric spacers on the recess's sidewalls and a deposited metal that reacts to create silicide. The recess is then filled and polished to finalize a silicide buried local interconnect.

The second patent focuses on "Test Structures for Development of Metal-Insulator-Metal (MIM) Devices." This electronic test structure features a conductor overlying a substrate, which supports an electronic device with electrodes separated by an insulating layer. This setup allows for exposed access to the conductor, facilitating testing and development in MIM device technology.

Career Highlights

Nicholas H. Tripsas has contributed his expertise to prestigious companies in the tech industry, notably Advanced Micro Devices Corporation and Spansion LLC. His work within these organizations has enabled the advancement of semiconductor technologies, which are critical to the functioning of modern electronic devices.

Collaborations

Throughout his career, Nicholas has collaborated with several notable professionals, including Mark T. Ramsbey and Suzette Keefe Pangrle. These collaborations have likely enriched his inventions and innovations, resulting in enhanced outcomes in his projects.

Conclusion

Nicholas H. Tripsas continues to be an influential figure in the field of semiconductor technology. With a robust patent portfolio and collaborative efforts with fellow innovators, his work propels advancements in electronic device capabilities and efficiency, solidifying his reputation as a key contributor to modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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