The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2009
Filed:
Oct. 21, 2005
Nicolay F. Yudanov, Brookline, MA (US);
Igor Sokolik, East Boston, MA (US);
Richard P. Kingsborough, North Chelmsford, MA (US);
William G. Leonard, Brookline, MA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Nicholas H. Tripsas, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Nicolay F. Yudanov, Brookline, MA (US);
Igor Sokolik, East Boston, MA (US);
Richard P. Kingsborough, North Chelmsford, MA (US);
William G. Leonard, Brookline, MA (US);
Suzette K. Pangrle, Cupertino, CA (US);
Nicholas H. Tripsas, San Jose, CA (US);
Minh Van Ngo, Fremont, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A system and method are disclosed for processing an organic memory cell. An exemplary system can employ an enclosed processing chamber, a passive layer formation component operative to form a passive layer on a first electrode, and an organic semiconductor layer formation component operative to form an organic semiconductor layer on the passive layer. A wafer substrate is not needed to transfer from a passive layer formation system to an organic semiconductor layer formation system. The passive layer is not exposed to air after formation of the passive layer and before formation of the organic semiconductor layer. As a result, conductive impurities caused by the exposure to air do not occur in the thin film layer, thus improving productivity, quality, and reliability of organic memory devices. The system can further employ a second electrode formation component operative to form a second electrode on the organic semiconductor layer.