The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2010
Filed:
Oct. 18, 2002
Arvind Halliyal, Cupertino, CA (US);
Nicholas H. Tripsas, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Arvind Halliyal, Cupertino, CA (US);
Nicholas H. Tripsas, San Jose, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a semiconductor device includes forming an interface layer, a nitrided gate dielectric, a gate electrode, and source drain regions. The interface layer is formed in a substrate by laser processing. The nitrided gate dielectric is formed over the interface layer by laser processing. The gate electrode is formed over the substrate and the gate dielectric after the laser processing step, and source/drain regions are formed in the substrate proximate to the gate electrode.