The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2006
Filed:
Jul. 01, 2004
Kelley Kyle Higgins, Sr., Austin, TX (US);
Ibrahim Khan Burki, Austin, TX (US);
Kelley Kyle Higgins, Sr., Austin, TX (US);
Ibrahim Khan Burki, Austin, TX (US);
FASL LLC, Sunnyvale, CA (US);
Abstract
A semiconductor component having a substantially planar surface on which a film can be deposited and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate and a layer of polysilicon is formed on the layer of dielectric material. The polysilicon layer is patterned to form floating gate structures and expose portions of the layer of dielectric material. Additional dielectric material is formed over the floating gate structures and the exposed portions of the layer of dielectric material. The additional dielectric material is planarized such that it has a surface that is substantially contiguous with and coplanar with the floating gate structures. An oxide-nitride-oxide (ONO) dielectric structure or stack is formed on the surfaces of the floating gate structures and the dielectric material. A layer of polysilicon is formed on the ONO dielectric structure.