Yoshinao Kumagai

This inventor holds 23 USPTO granted patents and 6 published patent applications, plus 2 CIPO patents and 9 EPO patents, primarily in Semiconductor Technology. Top assignees: Tokyo University of Agriculture and Technology, Tamura Corporation, Tokuyama Corporation. Active years: 2009-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshinao Kumagai. Retrieved from https://idiyas.com/inventor/yoshinao-kumagai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 23 (Patent Applications = 6)

% Patents Active = 82.6

CIPO Patents = 2

EPO Patents = 9 (Patent Applications = 15)

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 47(Granted Patents)

Location History:

Fucyu, JP (2009)
Koganei, JP (2009 - 2011)
Fuchu, JP (2012 - 2020)
Tokyo, JP (2016 - 2024)

Company Filing History:

14 out of 134

Tokyo University of Agriculture and Technology

Sumitomo Electric Industries, Limited

patents

5. 2 out of 471

National Institute of Information and Communications Technology, Incorporated

patents

6. 2 out of 10,918

Tokyo Electron Limited

Stanley Electric Co., Ltd

Tokyo University Agriculture and Technology Tlo Co., Ltd.

patent

13. 1 out of 1

University of Agriculture and Technology

patent

where one patent can have more than one assignee

Years Active: 2009-2024

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Areas of Expertise:

Beta-GaO

Single Crystal Film

Epitaxial Wafer

Nitride Semiconductor

Aluminum Nitride

Gallium Nitride

Schottky Barrier Diode

Indium Gallium Nitride

Crystal Laminate Structure

High Voltage

Epitaxial Growth

Vapor Phase Growth

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11982016 - Method for growing beta-GaO-based single crystal film, and crystalline layered structure (2024-05-14),

2. 11047067 - Crystal laminate structure (2021-06-29),

3. 10985016 - Semiconductor substrate, and epitaxial wafer and method for producing same (2021-04-20),

4. 10861945 - Semiconductor element and crystalline laminate structure (2020-12-08),

5. 10731274 - Group III nitride laminate and vertical semiconductor device having the laminate (2020-08-04),

6. 10676841 - Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer (2020-06-09),

7. 10538862 - Crystal laminate structure (2020-01-21),

8. 10199512 - High voltage withstand Ga2O3-based single crystal schottky barrier diode (2019-02-05),

9. 10125433 - Nitride semiconductor crystal, manufacturing method and manufacturing equipment (2018-11-13),

10. 9978904 - Indium gallium nitride light emitting devices (2018-05-22),

11. 9840790 - Highly transparent aluminum nitride single crystalline layers and devices made therefrom (2017-12-12),

12. 9708733 - Method for manufacturing aluminum-based group III nitride single crystal by hydride vapor phase epitaxy (2017-07-18),

13. 9691942 - Single-cystalline aluminum nitride substrate and a manufacturing method thereof (2017-06-27),

14. 9611545 - ZnO film production system and production method using ZnO film production system having heating units and control device (2017-04-04),

15. 9281180 - Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal (2016-03-08),

Title: The Innovative Contributions of Yoshinao Kumagai

Introduction

Yoshinao Kumagai is a notable inventor based in Tokyo, Japan, recognized for his remarkable contributions to the field of materials science. With an impressive total of 23 patents, Kumagai has demonstrated an unwavering commitment to innovation and the advancement of technology.

Latest Patents

Among his latest patents is a novel "Method for growing beta-GaO-based single crystal film." This invention outlines a method utilizing a HYPE (Hydride Vapor Phase Epitaxy) technique. The process involves exposing a GaO-based substrate to a gallium chloride-based gas and an oxygen-including gas, leading to the growth of a β-GaO-based single crystal film at a significant temperature of not less than 900° C. Another noteworthy patent is the "Crystal laminate structure," which aims to provide a β-GaO-based single crystal film with a uniformly incorporated dopant throughout the crystal. This structure allows for the concentration of the dopant to be controllable across a wide range, enhancing its functionality and application potential.

Career Highlights

Yoshinao Kumagai has had a distinguished career, contributing his expertise to prestigious institutions such as the National University Corporation Tokyo University of Agriculture and Technology and Tamura Corporation. His work at these organizations has not only advanced his research but also fostered the development of cutting-edge technologies.

Collaborations

Collaboration has been a significant aspect of Kumagai's career. He has worked alongside esteemed colleagues, including Akinori Koukitu and Hisashi Murakami, sharing insights and driving forward projects that contribute to the field of materials science. Their joint efforts have undoubtedly played a role in enhancing the impact of their respective inventions.

Conclusion

Yoshinao Kumagai's contributions to innovation in the field of materials science, particularly through his patents on β-GaO-based technologies, reflect his dedication to advancing knowledge and practical applications. His collaborations and extensive experience position him as a leader and an inspiration for future inventors and researchers in the industry.

Profile summary based on public USPTO records.