The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Feb. 17, 2016
Applicants:
Tamura Corporation, Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Inventors:
Ken Goto, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Yoshinao Kumagai, Tokyo, JP;
Hisashi Murakami, Tokyo, JP;
Assignees:
TAMURA CORPORATION, Tokyo, JP;
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/16 (2006.01); C30B 25/20 (2006.01); H01L 21/205 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); C30B 29/26 (2006.01); C30B 25/02 (2006.01); C30B 29/68 (2006.01); C30B 31/08 (2006.01);
U.S. Cl.
CPC ...
C30B 29/16 (2013.01); C30B 25/02 (2013.01); C30B 25/20 (2013.01); C30B 29/26 (2013.01); C30B 29/68 (2013.01); C30B 31/08 (2013.01); H01L 21/02433 (2013.01); H01L 21/02576 (2013.01); H01L 21/02598 (2013.01); H01L 21/045 (2013.01); H01L 21/2053 (2013.01);
Abstract
A crystal laminate structure includes a GaO-based substrate, and a β-GaO-based single crystal film formed by epitaxial crystal growth on a principal surface of the GaO-based substrate. The β-GaO-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×10atoms/cmand not more than 5.0×10atoms/cm.