Tokyo, Japan

Hisashi Murakami

This inventor holds 17 USPTO granted patents and 2 published patent applications and 4 EPO patents, primarily in Semiconductor Manufacturing. Top assignees: Tokyo University of Agriculture and Technology, Tamura Corporation, Mitsui Coke Co. Ltd.. Active years: 1977-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisashi Murakami. Retrieved from https://idiyas.com/inventor/hisashi-murakami

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 49(Granted Patents)


Location History:

  • Tokyo, JA (1977)
  • Fuchu, JP (2018 - 2022)
  • Tokyo, JP (1978 - 2024)

Company Filing History:


Years Active: 1977-2024

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Areas of Expertise:
Beta-GaO
Single Crystal Film
Vapor-Liquid Reaction
GaN Crystal
Epitaxial Wafer
Semiconductor Substrate
Group III Nitride
Schottky Barrier Diode
Indium Gallium Nitride
Crystalline Laminate
High Voltage Devices
Needle Coke
17 patents (USPTO):Explore Patents

Title: The Innovative Journey of Hisashi Murakami

Introduction

Hisashi Murakami, an accomplished inventor based in Tokyo, Japan, has made significant contributions to the field of material science and engineering. He holds a total of 17 patents, showcasing his dedication to innovation and advancement in technology. His work is particularly focused on methods related to crystalline structures and reactions, reflecting a deep understanding of complex chemical processes.

Latest Patents

Two of Hisashi Murakami's latest patents illustrate his pioneering efforts in the industry. The first patent, titled "Method for growing beta-GaO-based single crystal film," presents a technique that employs the HYPE method to develop a β-GaO-based single crystal film on a GaO-based substrate. This method involves exposing the substrate to a gallium chloride-based gas and an oxygen-including gas and requires a high growth temperature of no less than 900° C.

The second patent, concerning a "Vapor-liquid reaction device, reaction tube, film forming apparatus," provides innovative solutions for holding molten metal in a designated area within the vapor-liquid reaction chamber. This device enhances the efficiency and precision of chemical reactions, contributing to advancements in material synthesis.

Career Highlights

Throughout his career, Hisashi Murakami has collaborated with notable institutions, including the Tokyo University of Agriculture and Technology and Tamura Corporation. His professional journey is characterized by a commitment to research and development, pushing the boundaries of current technologies and fostering innovation.

Collaborations

Murakami has worked closely with esteemed colleagues such as Akinori Koukitu and Yoshinao Kumagai. Their combined expertise has led to fruitful collaborations that have furthered advancements in their respective fields. These partnerships underline the importance of teamwork in driving innovation and developing revolutionary technologies.

Conclusion

Hisashi Murakami's contributions to science and technology through his patents and collaborative efforts mark him as a leading figure in the field. As he continues to explore new territory in material science, his work serves as an inspiration for future inventors and researchers aiming to make a significant impact in the world of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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