The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Mar. 09, 2016
Tamura Corporation, Tokyo, JP;
National Institute of Information and Communications Technology, Tokyo, JP;
National University Corporation Tokyo University of Agriculture and Technology, Tokyo, JP;
Kohei Sasaki, Tokyo, JP;
Ken Goto, Tokyo, JP;
Masataka Higashiwaki, Tokyo, JP;
Akinori Koukitu, Tokyo, JP;
Yoshinao Kumagai, Tokyo, JP;
Hisashi Murakami, Tokyo, JP;
Abstract
A high withstand voltage Schottky barrier diode includes a first layer that includes a first GaO-based single crystal including a first Group IV element and Cl at a concentration of not more than 5×10cmand that has an effective donor concentration of not less than 1×10and not more than 6.0×10cm, a second layer that includes a second GaO-based single crystal including a second Group IV element and that has a higher effective donor concentration than the first layer and is laminated on the first layer, an anode electrode formed on the first layer, and a cathode electrode formed on the second layer.